Ultra-high voltage superimposed energy storage

What is high energy storage at low voltages?

High energy storage at low voltages due to synergetic effects of the polarization, imprint, and AFE behavior. Ultra- high U E = U Rec /E=17 J.MV/cm 2 and U F =U Rec / (1-η) =47 J/cm 3 at E= 400kV/cm (i.e., 20V).

How do we achieve high energy storage properties?

The high energy storage properties were achieved using a synergistic strategy involving large polarization, a giant built-in potential/imprint (five times higher than the coercive field), and AFE like behavior.

Is superparaelectric O phase a novel design for high energy storage?

The outstanding discharging property and temperature stability (variation of Wrec < ±15 % at 25–120 °C) are also realized in Ag 0.64 Bi 0.12 NbO 3 ceramics. These results prove constructing superparaelectric O phase is an effective and novel design for high energy storage AgNbO 3 -based material.

What is a high recoverable energy density?

Hence, an ultra-high recoverable energy density (7.6 J/cm 3) and a high efficiency (79 %) are simultaneously achieved in the Ag 0.64 Bi 0.12 NbO 3 ceramics under 52.2 kV/mm.

Can UREC and improve energy storage performance at low or moderate electric fields?

Despite these efforts to enhance the URec and η at high electric field, few studies have been performed to improve the energy storage performance at low or moderate electric fields, which is of high importance for the devices operating at low voltages, particularly in the case of thicker films.

What is the energy-storage density of pl/20 nm PN heterostructure?

A large recoverable energy-storage density of 43.5 J/cm 3 and a high energy-storage efficiency of 84.1%, were obtained in the 180 nm thick PL/20 nm PN heterostructure under moderate electric field of 2450 kV/cm (i.e., 49 V).